基于槽式聚光热电联供系统,深入分析晶硅电池阵列和砷化镓电池阵列在高倍聚光下的输出特性及输出功率的影响因素.研究结果表明,聚光光强下砷化镓电池阵列输出性能优于晶硅电池阵列,高光强会导致光伏电池禁带宽度变窄,短路电流成倍增加,增加输出功率,但同时耗尽层复合率变大,开路电压降低,制约阵列的输出功率;高光强还引起电池温度升高,电池阵列串联内阻增加.分析表明聚光作用下电池阵列串联内阻对输出功率影响巨大,串联内阻从0Ω增加1Ω,四种电池阵列输出功率分别损失67.78%,74.93%,77.30%和58.01%.
Detailed analysis on the output characteristic and power influence factors of crystal silicon solar cell arrays and GaAs cell arrays have been done based on trough concentrating photovoltaic/thermal system. The results show that under concentrated light intensity, the output performance of GaAs cell array is better than crystal silicon solar cell arrays. Band-gap of solar cell arrays narrows and short circuit current increases very much in concentrated light intensity, which are good for output power. But open circuit voltage of cells drops a little for high recombination rate in depletion region produced by high light intensity, which has a restrictive effect to output power. At the same time the series resistance of cell arrays increases and working temperature of cell arrays rises which are brought about by high concentrated light intensity. In high concentrated light intensity, series resistance of cell arrays hugely affect the output power. When series resistance increases from 0 Ω to 1 Ω, the out put power of four cell arrays respectively drop by 67.78%, 74.93%, 77.30% and 58.01%.