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Recent development of studies on the mechanism of resistive memories in several metal oxides
  • ISSN号：1674-7348
  • 期刊名称：Science China Physics,Mechanics & Astonomy
  • 时间：2013.12
  • 页码：2361-2369
  • 相关项目：阻变存储器工作机理的原位透射电镜研究
作者： Yang ShiZe|Xu Zhi|Wang WenLong|Bai XueDong|
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阻变存储器工作机理的原位透射电镜研究
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