中文摘要：

采用离子注入的方法在氮化铝薄膜中实现Pr3＋和Tm3＋元素的单掺杂和共掺杂。以Raman光谱为主要表征手段,对离子注入过程中薄膜内部的应力变化进行研究;以阴极荧光为主要表征手段,对其低温和室温下的发光特性进行研究。Raman光谱的结果显示,离子注入过程使得薄膜内部应力下降,而退火过程使得薄膜内部应力升高。阴极荧光光谱结果显示,Al N∶Pr3＋主要跃迁峰位于528 nm;Al N∶Tm3＋主要跃迁峰位位于467 nm;Al N∶Pr3＋,Tm3＋主要跃迁峰位位于528 nm和467 nm。Al N∶Tm3＋的低温光谱显示,与1I6和1D2两个能态相关的跃迁峰相对强度会随着温度出现急剧变化,由此表明在Tm3＋之间存在与温度相关的相互作用。

英文摘要：

Tm^3＋implanted Al N,Pr^3＋implanted Al N and Pr^3＋,Tm^3＋co-implanted Al N were prepared.The stress evolution and optical properties were investigated using Raman and Cathodoluminescence（CL）,respectively.Raman results indicate that internal stress decreases during the ions implantation process,and then increases after annealing.CL spectra shows that the main peaks centered at 528 nm and 467 nm are related to Pr^3＋and Tm^3＋,and both of them appear in the spectrum of Pr^3＋,Tm^3＋coimplanted Al N.However,with the temperature changing,there are significant intensity changes of peaks related1I6and1D2 state,which has indicated the existence of temperature related interaction between Tm^3＋.