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Formation of p-n-p junction with ionic liquid gate in graphene
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2014.4.7
  • 页码：-
  • 相关项目：III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控
作者： Wang, Xinqiang|Yang, Xuelin|Ge, Weikun|Shen, Bo|
同期刊论文项目
III族氮化物半导体异质结构中的自旋轨道耦合效应及其调控
期刊论文 29 会议论文 9
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