中文摘要：

在非结晶的 6H-SiC 的再结晶阶段的进化形成了由他热退火跟随的培植被调查。在 15 keV 的重新使结晶的层的微观结构他离子植入的 6H-SiC (0001 ) 晶片借助于代表性的传播电子显微镜学(XTEM ) 和高分辨率的 TEM 被描绘。埋葬的非结晶的层的取向附生的再结晶在 900 的退火的温度被观察吗？？

英文摘要：

The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of reerystallized layers in 15 keV He＋ ion implanted 6H-SiC （0001） wafers are characterized by means of cross-sectional transmission electron microscopy （XTEM） and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000℃, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.