中文摘要：

采用了一种低成本化学溶液法制备铜铟硒（CuInSe2, CIS）薄膜.研究了预退火温度、硒化温度及基片衬底等实验参数对材料性能的影响.采用硝酸铜和氯化铟配置前驱体溶液，旋涂法制膜，后经480℃硒化退火得到CIS薄膜.XRD测试结果表明薄膜结晶性良好，具黄铜矿结构；SEM测试结果显示薄膜由较大晶粒组成，表面相对平整致密；EDX测试显示薄膜组分相对合理，略贫Cu而富Se.采用此薄膜为吸收层制备CIS原型薄膜太阳能电池，其光电测试显示单层CIS光伏响应达到1.6%.

英文摘要：

A low cost chemical solution method for the preparation of CuInSe2 thin films was proposed. The changes of film properties were studied, which were caused by several parameters of the experiments, including the annealing temperature of the precursor films, the annealing temperature for selenization and different substrates. Copper nitrate and indium chloride were used to prepare the precursor solution. The precursor films were processed by the spin-coating method from the solution, and then selenized at 480℃ to obtain CIS thin films. XRD results show chalcopyrite structure with high crystallinity. SEM images show large grains and relatively smooth and dense surface. EDX analysis results indicate that the ratios of components were in a reasonable range, slightly poor in copper and rich in selenium. The sample films were sandwiched into CIS prototype solar cells as the absorbing layer. The photovoltaic response of a single CIS layered cell reaches 1.6%.