中文摘要：

利用分子束外延技术,在GaAs（001）基片上外延InGaAs/GaAs异质薄膜,通过RHEED图像演变实时监控薄膜生长状况,采用RHEED强度振荡测量薄膜生长速率,确定薄膜中In/Ga的组分比,并提出控制InGaAs薄膜中In/Ga组分比的生长方法。根据RHEED图像,指出获得的InGaAs薄膜处于（2×3）表面重构相。样品经过淬火至室温后对样品做STM扫描分析,证实样品为表面原子级平整的InGaAs/GaAs异质薄膜。

英文摘要：

This paper reports an experiment research which utilized of the molecular beam epitaxy technology to grow the InGaAs/GaAs film.The growth conditions was monitored through the RHEED patterns in real-time,the growth rate was measured and the composition of InGaAs film was determined by RHEED intensity oscillations,and a method was put forward to control the composition of In/Ga in InGaAs/GaAs film.According to the RHEED patterns,the surface of InGaAs film was（2×3） reconstructed.After growth,the sample was quenched down to room temperature then transferred into STM for scanning.A smooth,atomically flat surface of InGaAs/GaAs film was confirmed by the STM images.