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Improving Light Extraction Efficiency of GaN-Based LEDs by AlxGa1-xN Confining Layer and Embedded Ph
ISSN号:1077-260X
期刊名称:IEEE Journal of Selected Topics in Quantum Electro
时间:2012.12.12
页码:1650-1660
相关项目:宽光谱高效率纳米金属光天线的研究
作者:
Gao Hui|Li Kang|Kong Fan-Min|Chen Xin-Lian|Zhang Zhen-Ming|
同期刊论文项目
宽光谱高效率纳米金属光天线的研究
期刊论文 22
会议论文 2
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Parallel 3D Finite-Difference Time-Domain Method on Multi-GPU Systems
Improvement of light extraction efficiency of GaN-based blue light-emitting diode by disorder photon
Surface spherical crown arrays structure increases GaN-based LED efficiency
Effect of Structure of Nano-Hemisphere Microlens Array on Light Extraction Efficiency of GaN-LED
Improving the vertical light-extraction efficiency of GaN-based thin-film flip-chip LEDs with p-side
Study of light extraction efficiency of GaN-based light emitting diodes by using top micro/nanorod h
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Influence of Surface ZnO Nano-structures on the Light Emitting Efficiency of GaN-based LED
Analysis on the light extraction efficiency of GaN-based nanowires light-emitting diodes
Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of t
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Study of light extraction efficiency of flip-chip GaN-based LEDs with different periodic arrays
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基于OpenCL的图形处理器FDTD算法仿真研究