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Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

ISSN号：1674-4926
期刊名称：《半导体学报：英文版》
时间：0
分类：O484.3[理学—固体物理;理学—物理]
作者机构：[1]南京邮电大学,江苏南京210023
相关基金：国家自然科学基金资助项目（No.61106009）江苏省自然科学青年基金资助项目（No.BK20130866）;江苏省高校自然科学研究面上项目资助（No.14KJBS10020）;南京邮电大学校级科研基金资助项目（No.NY213025.NY213145）

作者： Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, Li Xin, Xie ZiLi, Zheng Youdou, Zheng Rongkun, Simon P Ringer

关键词：隧穿磁阻效应, 磁性隧道结, 栅控中间层, 自旋极化输运, 自旋电子器件, 自旋电子学, tunneling magnetoresistance effect, magnetic tunneling junctions, gate-controlled interlayer, spin-polarized transport, spintronic devices, spintronics

中文摘要：

基于Slonczewski理论模型和矩阵方法研究了由栅控制中间层电势高度的磁性隧道结的隧穿磁阻效应。数值计算了中间层势垒为0~3 V以及中间层势阱为0~3 V的磁性隧道结的隧穿磁阻随着中间层厚度改变的变化曲线。计算结果表明，当中间层为势垒时，隧穿磁阻随着中间层厚度单调下降；当中间层为势阱时，隧穿磁阻随着中间层厚度振荡，并且相比于势垒情况时明显提高。这说明栅控中间层磁性隧道结相比于传统磁性隧道结具有更好的可控性和提高隧穿磁阻效应的潜力。

英文摘要：

Based on Slonczewski’s model and matrix method, the tunneling magnetoresistance effect of the gate-controlled interlayer’s potential magnetic tunneling junctions was studied. The curves of the tunneling magnetoresistance versus the thickness of the interlayer were numerically calculated when the potential barrier was changed from 0 V to 3 V and the potential well was changed from 0 V to 3 V. Results show that the tunneling magnetoresistance decreases as the thickness of the interlayer increases when it is barrier; the tunneling magnetoresistance oscillates with the thickness of the interlayer and it is evidently improved compared with the barrier case when it is potential well. This indicates that the gate-controlled interlayer magnetic tunneling junctions have better controllability and the potential of high tunneling magnetoresistance effect, compared to conventional magnetic tunneling junctions.