中文摘要：

发射极载流子增强技术作为绝缘栅双极型晶体管（IGBT）器件所特有的技术手段,是进一步改善IGBT导通饱和压降和关断损耗折中性能的关键所在。在经历了20多年的发展之后,发射极载流子浓度增强的技术无论从结构和性能上都得到了巨大的提升。概述了IGBT载流子增强技术的发展过程,针对IGBT中的载流子分布,分析了载流子增强技术的物理机制,介绍了传统载流子增强技术所采用的器件结构及实现方法,包括注入增强型绝缘栅双极型晶体管（IEGT）,载流子存储层结构的沟槽型双极型晶体管（CSTBT）,高导电率IGBT（HiGT）,平面增强结构IGBT,以及最近几年较新型的介质阻挡层IGBT,局部窄台面IGBT,p型埋层CSTBT等。着重讨论了每种器件的结构特点以及性能上的改善。载流子增强技术将是新一代IGBT器件设计的一个主要技术手段。

英文摘要：

The technology of enhancing carrier concentration on the emitter side,as a particular technical means of insulated gate bipolar transistor（ IGBT）,is the key to further improve the Vce（ on）-Eoff trade-off characteristics of IGBT. Through 20 years of development,the technology of enhancing carrier concentration has been greatly improved both in structure and performance. The development process of enhancing carrier concentration technology is summarized. The physical mechanism of the technology is also analyzed based on the carrier distribution of IGBT. The structure of the device which is used in enhancing carrier concentration technology and its implementation method are introduced, including injection enhanced gate bipolar transistor（ IEGT）,carrier stored trench gate bipolar transistor（ CSTBT）, High-conductivity IGBT（ HiGT）, enhanced-planar IGBT, and some new sorts appearing in recent years,dielectric barrier IGBT,partially narrow mesa IGBT and p-type buried layer CSTBT. The structural characteristics and the performance improvements of each device are emphatically discussed.The IGBT structures using the carrier enhancement technology is considering to be a main development direction in the next generation of IGBT.