中文摘要：

通过掩膜板制备源漏电极的方法，以非晶铟-镓-锌氧化物（a—IGzO）为有源层，制备了结构为ITO／siO2（400nm）／a-IGZO（50nm）／Al的底栅顶接触型（BGTC）光敏薄膜场效应晶体管（TFT）并研究了其光敏特性。实验发现，在蒸镀AI电极作为源极和漏极，再在空气中及350℃的温度下退火1h后，器件的阈值电压Vth为15．OV，在栅源偏压VGS-30V时其有效场效应迁移率为0．57cm0／Vs，表现出良好的晶体管特性。当用强度为8．1roW／era0的白光照射时，器件表现出明显的光敏特性，其Vth下降为-15．0V，在源漏电压VDS-20V且VGS-30V时其有效场效应迁移率上升为1．34cm2／Vs，在VGs-2．5V时其“明／暗”电流比达到一极大值，响应率达到1．11A／w，并具有良好的时间响应特性。

英文摘要：

Amorphous indium-gallium-zinc-oxide （a-IGZO） composed of In2O3 ,Ga2O3 and ZnO is an ntype semiconductor with a band width of 3. 5 eV, and currently it has become a hot research field of field-effect transistors for its properties. In order to investigate its potential application for future photoelectric sensors,by fabricating electrodes with a mask,here we present a bottomate/top-contact fieldeffect transistor with structure of ITO/SiO2 （400 nm）/a-IGZO（50 nm）/A1 in which a-IGZO acts as active layer, and its photosensitive properties are characterized. After thermally evaporating A1 layer to fabricate drain and source electrodes with a mask, the device is annealed in ambient air at 350℃ for an hour,and the a-IGZO-based thin-film field-effect transistor （TFT） shows good transistor characteristics of a mobility of 0. 57 cm2/Vs at VGs =30 V and a threshold voltage of 15.0 V. Under white light illumination with an intensity of 8.1 mW/cmz , the device shows obviously enhanced photosensitive properties, its mobility increases to 1.34 cm2/Vs at VDs =20 V and VGs =30 V,its threshold voltage reduces to -15.0 V,and its current ratio （K） of photocurrent to current in dark reaches a maximum at VGS =2.5 V with a responsivity of 1.11 A/W presenting good time-responsive characteristics.