中文摘要：

沟槽栅场终止型代表了绝缘栅双极型晶体管（IGBT）的最新结构.由于沟槽栅结构与平面栅结构在基区载流子输运、栅极结电容计算等方面存在较大的不同,沿用平面栅结构的建模方法不可避免会存在较大的偏差.基于对沟槽栅场终止型IGBT结构特点及模型坐标系的分析,考虑载流子二维效应将基区分成PNP和PIN两部分,根据PIN部分的沟槽栅能否被PNP部分的耗尽层覆盖分析了栅极结电容计算方法,提出一种沟槽栅场终止型 IGBT 瞬态数学模型,并进行仿真与实验验证.

英文摘要：

The trench field-stop （FS） configuration represents the latest generation of the insulated gate bipolar transistor （IGBT）. The trench gate and plane gate have great differences in base carrier transportation and gate junction capacitance calculation. Hence, error would exist inevitably if the modeling method still follows the plane gate configuration. Therefore, based on the analysis of the trench FS structure and the modeling coordinate, base region is divided into PNP and PIN components considering 2D effects of base carrier transportation. The calculation methods of gate junction capacitance are thus analyzed according to whether the trench gate in the PIN part is covered by the depletion layer in the PNP part. Finally, the proposed mathematical modeling method of the transient process of the trench FS IGBT was verified by simulations and experiments.