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硅纳米晶存储器的耐受性研究
  • ISSN号：1671-4776
  • 期刊名称：《微纳电子技术》
  • 时间：0
  • 分类：TN409[电子电信—微电子学与固体电子学]
  • 作者机构：[1]成都信息工程学院通信工程学院,四川成都610225
  • 相关基金：国家自然科学基金资助项目（61306107）;中国博士后科学基金面上资助项目（2014M550866）;感谢成都信息工程学院科研基金（KYTZ201318）对本文的资助
作者： 姜丹丹[1,2], 霍宗亮[2], 靳磊[2], 杨潇楠[2], 王永[2], 刘明[2]
关键词： 非挥发性存储器, 电流模升压转化器, 电流环路稳定性, 脉冲宽度调制, 数据采样模型, non-volatile memory, current-mode boost, current-loop instability, pulse width modulation, sample-data modeling
中文摘要：

针对高压产生系统在非挥发性存储器中的重要作用,推导出一个用于电流模DC-DC升压转换器稳定性分析的精确模型.该模型综合了传统的脉冲宽度调制模型的简洁性以及离散时间采样系统的精确性,得到一个精确的、具有较强指导意义的传输函数模型.同时,根据推导的结果搭建了一个简洁、直观的仿真电路模型.通过此传输函数模型以及仿真电路模型,可以方便快捷的分析、仿真得到电路中的每一个参数对转化器的增益、电流环稳定性、右半平面零点、输出极点的影响.所介绍的方法也可以直接用于其他DGDC转化器传输函数的推导.

英文摘要：

This paper derives an accurate model for the current-mode boost converter,which has become an important part in the non-volatile memories.This model combines the simplicity of traditional PWM switch model and the accuracy of sampled-data modeling.It integrates the well-known current-loop instability together and shows accurate results up to half the switching frequency.Besides,based on the new transfer function,a new simulation circuit is constructed,which can be conveniently used to evaluate the effect of every single parameter to the current-loop instability,right-half-plane zero,control-to-output gain and output pole.The method used in this article can be easily adopted to derive other dc-dc converter transfer functions.

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期刊信息
  • 《微纳电子技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：李和委
  • 地址：石家庄市179信箱46分箱
  • 邮编：050002
  • 邮箱：wndz@vip.sina.com
  • 电话：0311-87091487
  • 国际标准刊号：ISSN：1671-4776
  • 国内统一刊号：ISSN：13-1314/TN
  • 邮发代号:18-60
  • 获奖情况:
  • 2002-2003和2003-2004年度，均获信息产业部电子科...,2005-2006年度获信息产业部电子科技期刊学术技术...,中国学术期刊执行（光盘版）检索与评价数据规范优...,2007-2008年度又荣获工业和信息化部电子科技期刊...
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国剑桥科学文摘,英国科学文摘数据库,中国中国科技核心期刊,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）
  • 被引量:3327