中文摘要：

<正>The RC-IGBT(reverse conducting insulated gate bipolar transistor) is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.

英文摘要：

The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.