中文摘要：

采用电子密度拓扑分析法研究了由氧族和氮族元素双取代的类1,8-双取代萘衍生物中离域键E…E（E=ⅤA,ⅥA元素）的性质.结果表明,O,S,Se,N,P和As取代的类1,8-双取代萘衍生物分子中存在离域E…E键作用.此类E…E键属于弱相互作用.总的来说,氧族元素间形成的离域键强于氮族元素形成的离域键,且键的强度按O,S,Se或N,P,As的顺序逐渐减弱.其中E为O,S,Se,N,P形成的E…E键为静电作用,As…As键有部分共价作用.

英文摘要：

The properties of a new delocalised E...E bonding（E= V A, VI A elements） in peri-1,8-disub- stituted naphthalene derivatives were studied by the electron density topological analysis method. The results predicted the existence of the delocalized bonding of E…E bond for E=O,S,Se,N,P and As,in the peri-1,8-disubstituted naphthalene derivatives. In total, chalcogen… chalcogen bonding was stronger than nitrogen…nitrogen bonding. Topological analysis showed that this kind of E…E bonding belonged to weak interaction. The strength of the E…E bonding decreased in the sequence of O,S,Se or N,P,As. The E…E bonding are electrostatic interactions for E=O, S,Se,N,and P, while the As…As bonding has partly covalent interaction.