采用直流/射频磁控溅射方法和不连续多层交替溅射工艺,制备了CoFeB-SiO2系列纳米不连续多层磁性颗粒膜,并对制备的薄膜样品进行了不同温度下的退火处理.实验结果表明,通过调整SiO2绝缘介质相含量及磁场退火温度可有效地调控薄膜微结构和微波电磁特性.制备的薄膜样品在GHz微波频段同时具有高磁导率和高磁损耗,1.5GHz处薄膜复相对磁导率实部和虚部均大于260,同时电阻率高达1.38mΩ·cm.该薄膜样品可应用于微波吸收材料和抗电磁干扰的设计中.
A series of multilayers of CoFeB-SiO2 was fabricated by using DC/RF magnetron sputtering, and then annealed in vacuum at different temperatures. The results show that microstructures and electromagnetic properties of the CoFeB-SiO2 multilayer films can be altered by varying the volume fraction of SiO2 and the annealing temperature. High permeability along with high magnetic loss in the GHz frequency range is achieved in the optimized discontinuous multilayer films. Both real and imaginary part of the complex permeability are larger than 260 at 1.5GHz for these films, and the resistivity is as high as 1.38mΩ·cm. The CoFeB-SiO2 multilayers are supposed to serve as the microwave absorbers in GHz range.