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Impact of 〈100〉Channel Direction for High Mobility p-MOSFETs on Biaxial Strained Silicon
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  • 相关项目：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
同期刊论文项目
适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
期刊论文 36 会议论文 5
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