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Fabrication and Characterization of Silicon Quantum Dots in Si-Rich Silicon Carbide Films
  • ISSN号：1533-4880
  • 期刊名称：Journal of Nanoscience and Nanotechnology
  • 时间：0
  • 页码：10824-10828
  • 相关项目：应变硅/硅锗微细特征单元结构失稳及应变弛豫研究
作者： Chang, Geng-Rong|Ma, Fei|Ma, Dayan|Xu, Kewei|
同期刊论文项目
应变硅/硅锗微细特征单元结构失稳及应变弛豫研究
期刊论文 18
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