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中文摘要：
为了解决能源互联网分布式数据中心的生存性问题，文章面向数据中心网络，提出了联合资源业务恢复机制。仿真结果表明，该策略实现了服务的动态恢复，提高了服务器的响应速度，对能源互联网中数据中心网络的发展具有较强的实用性与可落实性。
英文摘要：
In order to solve the survivability problem of the distributed data center in energy interconnection, we propose a new resource recovery mechanism, which is data center-oriented. The simulation results show that the strategy realizes the dynamic recovery of the service and improves the response speed of the server, which exhibits high practicality and enforceability for the development of the data center network in the energy interconnection.
同期刊论文项目
同项目期刊论文
Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quan
Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitti
Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGa
Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-e
Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in In
Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN mul
Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with interlayer by suppressin
Efficiency droop alleviation in the blue light emitting diodes by the InGaN/GaN triangular shaped qu
Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a hig
Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor depo
The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/Ga
Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum w
Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emi
Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with align
High conductive gate leakage current channels induced by In segregation around screw- and mixed-type
High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic va
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-base
Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapo
Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered
Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based lase
Practicable alleviation of efficiency droop effect using surface plasmon coupling in GaN-based light
Precise relationship between voltage and frequency at the appearance of negative capacitance in InGa
Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpent
Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Org
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