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中文摘要：
目的 研究在镀铜的铁基引线支架上沉积钨薄膜的工艺及其性能。方法 利用真空磁控溅射技术沉积制备钨薄膜层,并用SEM,EDS,XRD等技术对沉积层的组织和性能进行分析。结果 在一定的工作气压、温度和沉积时间下,钨沉积层厚度随着溅射功率的增大非线性增加,沉积层均匀性好,组织较致密,与基体结合力较强,沉积层钨原子沿（110）晶面择优生长。沉积层的电阻率小于1.5×10^-6Ω·m,电阻温度系数小于0.0052/℃,抗氧化性较好。结论 在引线支架表面沉积金属钨可获得组织均匀致密的薄膜,其结合力、导电性、抗氧化性能良好。
英文摘要：
Objective To study the technology and properties of depositing metal W film on the surface of iron-based lead frames, which had been deposited with Cu. Methods Tungsten films layer was prepared by vacuum magnetron sputtering deposition technique, and then the structure and properties of the deposited layers were analyzed by SEM, EDS, XRD and other techniques. Results Under certain operating conditions of pressure, temperature and deposition time, the thickness of tungsten deposition layers increased with the increase of sputtering power, but the increase was nonlinear. The film thickness uniformity of the deposited layer was good, with dense structure and strong binding force with the substrate. The deposited layer films by magnetron sputtering W had low impurity content and stable chemical composition, the deposition process W atoms preferred growth along the （ 110 ） crystal plane, and there was deviation in XRD peaks. The tungsten deposition layers had good electrical conductivity, its resistivity wasless than 1.5×10^-6Ω·m, and the resistance temperature coefficient was less than 0. 0052/℃. Tungsten deposition layer had good oxidation resistance, oxide layer did not occur after 8-hour baking at 180℃. Conclusion Depositing metal tungsten on the surface of the lead frames resulted in uniform and dense films, with good adhesion, conductivity and oxidation resistance.
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