中文摘要：

半极性GaN材料的研究在光电器件和电子器件领域有重要意义。采用选区外延生长技术在Si衬底上生长半极性GaN材料,并制备肖特基势垒二极管（SBD）。通过测量SBD在不同温度下的I-V特性曲线,观察到电流的大小随着温度的增加而增加,且受反向偏压影响,证明半极性GaN基SBD的电流传输机制为热电子场发射模型。光致发光光谱和X射线光电子能谱测试进一步表明,相比极性c面GaN材料,半极性GaN材料表面存在较高的氧杂质原子浓度和氮空位,此为半极性GaN肖特基特性偏离热电子发射模型的主要因素。

英文摘要：

The study of semipolar GaN materials is significant in the field of optoelectronic devices and electronic devices.Semipolar GaN materials were grown on Si substrates by selective area growth technique,and Schottky barriers diodes （SBDs） were fabricated.By measuring the I-V characteristic curves of the SBD at different temperatures,it was observed that the magnitude of the current increased with the increase of the temperature and the current was affected by the reverse bias voltage.It is proved that the current transmission mechanism of the semipolar GaN-based SBD is thermionic field emission model.The photoluminescence spectra and X-ray photoelectron spectroscopy tests further show that there are higher oxygen impurity atomic concentrations and nitrogen vacancies on the surface of semipolar GaN materials compared with the polar c-plane GaN material,which is the main reason for the semipolar GaN Schottky characteristics deviation from the thermionic emission model.