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PT/PZT/PT铁电薄膜的铁电畴和畴壁
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：O772[理学—晶体学] TN304.9[电子电信—物理电子学]
  • 作者机构：[1]华中科技大学电子科学与技术系,武汉 430074, [2]成都电子科技大学微电子与固体电子学院,成都 610054, [3]武汉理工大学材料研究与测试中心,武汉 430070
  • 相关基金：国家自然科学基金（批准号：60171012）和国家自然科学基金重大研究计划（批准号：90407023）资助的课题.
作者： 王龙海[1], 于军[1], 刘锋[1], 郑朝丹[1], 李佳[1], 王耘波[1], 高峻雄[1], 王志红[2], 曾慧中[2], 赵素玲[3]
关键词： 铁电薄膜, PT/PZT/PT, 电畴和畴壁, 扫描力显微镜(SFM), ferroelectric thin film, PT/PZT/PT, domain and domain wall, scanning force microscope（SFM）
中文摘要：

用sol-gel法制备出了具有良好铁电性、纯钙钛矿结构的PbTiO3/Pb（Zr0.3Ti0.7）O3/PbTiO3（PT/PZT/PT）新型夹心结构铁电薄膜.用扫描力显微镜（SFM）的压电响应模式获得了薄膜铁电畴的垂直于膜平面方向（OPP）、膜平面内（IPP）及OPP的相位和幅度图像,结合理论分析指出薄膜的电畴主要由c畴和偏离垂直于膜平面方向上的c畴构成,薄膜取向的复杂性导致了复杂的畴结构.对于[111]取向的薄膜,当偏离垂直于膜平面方向上的c畴在垂直膜平面方向和面内方向都相反时构成180°的畴壁,在垂直膜平面方向上相同、面内方向相反或由垂直膜平面方向上相反、面内方向相同时构成90°畴壁.

英文摘要：

The polycrystalline perovskite-phase PT/PZT/PT ferroelectric thin film was prepared by sol-gel method. The domain and domain wall structures were investigated by scanning force microscopy. The out-of-plane polarization（ OPP）, in-plane polarization （IPP）, the OPP amplitude and OPP phase images were obtained. The domain of the film has a complex structure with c-domain and deviated-c-domain the direction of which deviated from the surface normal of the film. The complex domain structure is related to the orientation of the crystal grains in the film. For the [ 111 ]oriented films, the 180°domain wall is formed when deviated-c-domains have reverse directions in OPP and IPP. The 90°domain wall is formed when the domains have the same direction in OPP and reverse directions in IPP, or when they have reverse directions in OPP and same direction in IPP.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876