Spin Noise Spectroscopy in N-GaAs: Spin Relaxation of Localized Electrons
- ISSN号:0256-307X
- 期刊名称:《中国物理快报:英文版》
- 时间:0
- 分类:TN304.23[电子电信—物理电子学] TG132.27[金属学及工艺—合金;一般工业技术—材料科学与工程;金属学及工艺—金属学]
- 作者机构:[1]SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, [2]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
- 相关基金:Supported by the National Key Research and Development Program of China under Grant No 2016YFA0301202, the National Basic Research Program of China under Grant No 2013CB922304, the National Natural Science Foundation of China under Grant Nos 91321310 and 11674311, and the K. C. Wong Education Foundation.
中文摘要:
在做 n 的体积 GaAs 的电子的旋转噪音光谱学(SNS ) 作为温度和探查激光精力的功能被学习。试验性的结果证明 SNS 信号在施主乐队来自局部性的电子。电子的旋转松驰时间,从 SNS 测量被检索,取决于探查光能并且温度,和它能被归功于到电子本地化的变化度。
英文摘要:
Spin noise spectroscopy (SNS) of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the donor band. The spin relaxation time of electrons~ which is retrieved from the SNS measurement, depends on the probe light energy and temperature, and it can be ascribed to the variation of electron localization degree.