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中文摘要：
为了研究温度对808 nm InGaAlAs垂直腔面发射激光器(VCSEL)列阵输出特性的影响,通过变温塞耳迈耶尔方程计算了InGaAlAs量子阱VCSEL的温度漂移系数。采用非闭合环结构,制备了2×2的808 nm垂直腔面发射激光器列阵,每个单元的出光口径为60μm。通过热沉温度调节,对不同温度下的列阵激射波长、光功率以及阈值电流进行了测量。在温度为20℃、脉宽为50μs、重复频率为100 Hz的脉冲条件下,列阵的最大输出功率达到56 mW,中心光谱值为808.38 nm,光谱半宽为2.5 nm,连续输出功率达到22 mW。通过变温测试,发现输出功率在50℃以上衰减剧烈,列阵的温漂系数为0.055 nm/℃。实验测得的温漂系数与理论值保持一致。
英文摘要：
In order to study the output characteristics of 808 nm InGaAlAs vertical cavity surface emitting laser( VCSEL) array at different temperature,the InGaAlAs VCSEL temperature shift is calculated under the temperature-dependent Sellmeier equation. 2 × 2 arrays of 808 nm VCSEL are fabricated with non-closed structure. Each emitter diameter is 60 μm. Lasing wavelength,optical power and the threshold current are measured by changing the temperature of heat sink. The maximum output power reaches 56 mW in the pulse width of 50 μs,and the repetition frequency of 100 Hz at 20 ℃. The central wavelength is 808. 38 nm,and the full width at half maximum is 2. 5 nm, continuous output power reaches 22 mW,the output power decreases rapidly above 50 ℃,the temperature shift is 0. 055 nm / ℃. Experimental temperature shift is consistent with the theoretical value.
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