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中文摘要：
基于杂质浓度分布的突变结或线性缓变结模型，二极管p-n结（电）容一（电）压关系可简单地由C-V幂律描述。精密的实验测量数据显示，采用指数n=1／2或n=1／3不足以全面描述非超突变结C-V关系。通过引入杂质浓度幂函数分布规律并利用泊松方程，从而获得二极管p-n结C-V幂律通式，而指数n=1／2或n=1／3仅是新模型的特例。运用合理的数据处理技术，由一系列实验结果说明该幂律分析方法更具普适性。
英文摘要：
Power-low can present the relation of capacity-voltage for diode abrupt p-n junction and the linearly graded p-n junction, but precise measurements show there existing limitation in these tradition models. Based on experiment data from the most common commercial diodes, the power-low with n = 1/2 or n = 1/3 can not well described the non-hyperabrupt junction. The universal form of power-low is formulated from Passion equation for impurity concentration distribution in diode p-n junction. With improved C-V power-low, data from non-hyperadrupt junction can be expressed accurately with this modified model but the component of n = 1/2 or n = 1/3 as the simple cases. The improved C-V power-low develops the new method to get more accurate physics parameters for diode p-n junction.
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