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High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Su
  • ISSN号：1041-1135
  • 期刊名称：IEEE Photonics Technology Letters
  • 时间：2013.4.4
  • 页码：652-654
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Wang, Guosheng|Lu, Hai|Chen, Dunjun|Ren, Fangfang|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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