中文摘要：

采用凝胶溶胶法在Pt（111）/Ti/Si O2/Si衬底上制备了位于正交反铁电-四方反铁电（AFEO-AFET）和四方反铁电-铁电（AFET-FE）准同型相界（MPB）附近的（Pb0.97La0.02）（Zr0.80Sn0.20-xTix）O3（x=0.06,0.11）厚膜.系统的研究了其微观结构、介电性质和疲劳行为.2种厚膜具有为纯的钙钛矿结构,表面均匀致密且粗糙度较小.介电性能、铁电性能测试结果表明：2个组分展现出不同的介电性质和相转变行为.室温下,位于正交反铁电-四方反铁电（AFEO-AFET）MPB附近的厚膜表现出反铁电行为,而位于四方反铁电-铁电（AFET-FE）MPB附近的厚膜具有铁电行为.此外,场强和温度对位于不同准同型相界的2种厚膜表现出不同的疲劳行为.

英文摘要：

（ Pb0.97La0.02）（ Zr0. 80Sn0. 20- xTix） O3（ PLZST） thick films with x = 0. 06,0. 11 were successful by prepared by a sol-gel method,which were located in the orthorhombic AFE- tetragonal AFE（ AFEO-AFET） and tetragonal AFE-ferroelectric（ AFET-FE）morphotropic phase boundary（ MPB）,respectively. The microstructure,dielectric properties and polarization fatigue behavior were investigated in detail. Two samples have a smooth,dense,void-free microstructure and surface roughness for small. It was found that the two films illustrated a quite different phase transition performance under the function of external electric field and temperature. At room temperature,PLZST films located at AFEO-AFETMPB showed AFE nature,while the films at AFET-FE MPB displayed FE character.Moreover,it was found that the two films illustrated a quite different polarization fatigue behavior under the function of external electric field and temperature.