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High Deep-Ultraviolet Quantum Efficiency GaN P-I-N Photodetectors with Thin P-GaN Contact Layer
  • ISSN号：0256-307X
  • 期刊名称：Chinese Physics Letters
  • 时间：2013.1.1
  • 页码：017302-
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Lian Hai-Feng|Wang Guo-Sheng|Lu Hai|Ren Fang-Fang|Chen Dun-Jun|Zhang Rong|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
同项目期刊论文
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Temperature dependent growth of InGaN/GaN single quantum well
Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
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Reverse leakage current in AIGaN-based ultraviolet light-emitting diodes
Effects of V/III ratio on the growth of a-plane GaN films
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
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期刊信息
  • 《中国物理快报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院物理研究所、中国物理学会
  • 主编：
  • 地址：北京中关村中国科学院物理研究所内（北京603信箱《中国物理快报》编辑部）
  • 邮编：100080
  • 邮箱：cpl@aphy.iphy.ac.cn
  • 电话：010-82649490 82649024
  • 国际标准刊号：ISSN：0256-307X
  • 国内统一刊号：ISSN：11-1959/O4
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵“双高”期刊
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  • 被引量:190