综述了半导体β-FeSi2薄膜的制备、薄膜的表征、能带的特点、电学、光学性质等方面的研究进展,讨论了几种用于Si衬底上外延生长β-FeSi2薄膜方法的优缺点,分析了制备高品质β-FeSi2薄膜所存在的理论和技术上的难题,展望了β-FeSi2薄膜作为新光电材料的应用前景.
Reviewes the investigation of synthesize of β-FeSi2 thin films and its characteristic are present; Summarizes some processes for β-FeSi2 thin film to be grown epitaxially on Si substrates. Analyses the theoretical and technological problem on the preparation of β-FeSi2 thin film, prospects the application of β-FeSi2 thin film as a new photoelectric material.