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太赫兹硅雪崩渡越时间二极管低温特性研究
  • ISSN号：1000-3258
  • 期刊名称：低温物理学报
  • 时间：0
  • 页码：146-149
  • 语言：中文
  • 分类：TN253[电子电信—物理电子学] TN304.12[电子电信—物理电子学]
  • 作者机构：[1]东南大学毫米波国家重点实验室,南京210096, [2]南京电子器件研究所,南京210016
  • 相关基金：国家自然科学基金（项目编号：604-71017,60621002）资助的课题.
  • 相关项目：电磁场与微波技术
作者： 吴涛; 祝大龙; 徐金平; 王霄|
关键词： 太赫兹, 硅崩越二极管, 低温, 频率特性, 功率特性, Terahertz, Silicon-IMPATT, Cryogenic temperature, Frequency characteristic, Outputpower characteristic
中文摘要：

本文给出了准确描述硅雪崩渡越时间二极管工作特性的大信号仿真模型,研究了影响硅雪崩越时间（IMPATT,Impact Avalanche Transit Time）二极管工作状态的离化率和饱和漂移速度.考虑Si-IMPATT二极管热限制的条件下,计算了二极管的最大工作电流.通过大信号仿真分析,我们得到如下结果：（1）随着温度的降低,二极管输出功率提高;（2）随着温度的降低,二极管工作频率向高端偏移.本文还建立了液氮制冷环境下IMPATT振荡器的测试系统,与常温工作相比,77K低温环境下IMPATT二极管的输出功率提高了47.8%,频率也向高端偏移了6.3%,实验结果与仿真预测一致.

英文摘要：

An accurate drift-diffusion large-signal model for Silicon-IMPATT （Impact Avalanche Transit Time） diode is introduced. Ionization rate and saturated velocities which strongly influence the operation conditions of such diodes are carefully studied. Considering the thermal limitation condition of Silicon- IMPATI＇, we calculate the upper bias current. From accurate analysis the oscillation frequency is predicted to shift upward with decreased temperature and output power is largely enhanced with low temperature. A liquid nitrogen cooled environment for IMPATT diode oscillator is constructed. Compare with diodes operating at room temperature, the output power increased about 47.8% and the frequency upward shift is about 6.3% at 77K.

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电磁场与微波技术
期刊论文 342 会议论文 179 获奖 13 专利 23 著作 2
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期刊信息
  • 《低温物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国科学技术大学
  • 主编：赵忠贤
  • 地址：安徽省合肥市金寨路96号
  • 邮编：230026
  • 邮箱：LiBiyou@ustc.edu.cn
  • 电话：0551-3601359
  • 国际标准刊号：ISSN：1000-3258
  • 国内统一刊号：ISSN：34-1053/O4
  • 邮发代号:26-136
  • 获奖情况:
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:1577