提出了一种测量微通道板(MCP)量子效率的方法。该方法选用激光等离子体光源作为极紫外辐射源,使用传递标准探测器一硅光电二极管标定光源强度,用标定后的光照射待测MCP,采用直接测量电压来间接测量探测器输出电流,再计算出MCP量子效率。实验结果表明,在12-40nm,MCP量子效率为2%~12.3%,量子效率随波长的增大呈下降趋势。测量与误差分析表明,导致MCP量子效率测量结果变化的主要因素是光源稳定性和机械转动精度。通过与计数方式测量结果比较,进一步验证了本测量方法的正确性。
A technique to measure the Quantum Efficiency (QE) of a Microchannel Plate (MCP) was proposed. A laser plasma source was chosen as a Extreme Ultraviolet (EUV) radiant source and was calibrated by a transferring standard detector--silicon photodiode. Then,the MCP detector was irradiated,and the current transmitted from the detector was indirectly measured by measuring the voltage. Finally, the QE of the MCP was computed by a simple formula. The results indicate that the QE is from 2% to 12.3% in 12-40 nm and drops with increasing wavelength. The major factors affecting on the QE fluctuation in the measurement process are the stability of the light source and the rotation accuracy of the mechanism. Comparing with the result obtained by counting technique, the measuring technique is further proved to be correct and efficiency.