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表面态对碳纳米管场发射的影响
  • ISSN号：1005-023X
  • 期刊名称：《材料导报》
  • 时间：0
  • 分类：TB383[一般工业技术—材料科学与工程]
  • 作者机构：[1]重庆大学数理学院应用物理系,重庆400044
  • 相关基金：国家自然科学基金（60976055）
作者： 贺叶露[1], 王蜀霞[1], 陈伟中[1], 陈西浩[1], 杜声玖[1]
关键词： 碳纳米管, 吸附, 场发射, 密度泛函理论, CNTs, adsorbates, field emission, density function theory
中文摘要：

采用CVD法在Ni丝上直接沉积碳纳米管，并应用二极管结构测试表面态（突出尖端和吸附）对碳纳米管场发射的影响。测试表明，突出尖端主要影响碳纳米管场发射的开启电场以及场发射电流稳定性；吸附作用的影响表现在改变碳纳米管能带结构进而改变其场发射性能。

英文摘要：

CNTs-Ni wires were fabricated by the direct deposition of CVD method, effects of protruding tips and adsorbates on field-emission properties were tested by diode-type configuration. Test results show that the turn-on field and stability of field emission current of CNTs are mostly affected by protruding tips. Because the bands and densities of CNTs are changed by adsorbates, field emission properties are influenced.

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期刊信息
  • 《材料导报：纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
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  • 地址：重庆市渝北区洪湖西路18号
  • 邮编：401121
  • 邮箱：matreved@163.com
  • 电话：023-67398525
  • 国际标准刊号：ISSN：1005-023X
  • 国内统一刊号：ISSN：50-1078/TB
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  • 被引量:3397