中文摘要：

采用光学金相以及电子背散射衍射技术,对单晶连续铸造以及传统连续铸造2种技术制备的单晶和多晶铜线材冷拔变形组织的再结晶温度、完全再结晶后的晶粒尺寸以及再结晶组织的孪晶界等进行分析,并比较两者之间的差异。研究结果表明,与多晶铜线材相比,单晶铜线材的再结晶温度较高,完全再结晶的晶粒尺寸较大;随变形量的增加,两者之间的再结晶温度以及再结晶后晶粒尺寸的差异减小。随退火温度以及塑性变形量的增加,冷拔铜线材单个晶粒的孪晶数量减少。与冷拔多晶铜线材相比,单晶铜线材再结晶后孪晶数量明显增多,随塑性变形量以及退火温度的增加,冷拔单晶与多晶铜线材单个晶粒内孪晶数量的差异明显减小。

英文摘要：

In the present paper, single crystal copper and polycrystalline copper wires are produced by the continuous casting and traditional continuous casting, respectively. By means of optical microscopy and electron backseattering diffraction, the recrystallization behaviors of drawn copper wires have been analyzed and compared. It is found that the recrystallization temperature of drawn single crystal is higher and the grain diameter after complete recrystallization is larger than those of drawn polycrystalline. With strain and temperature increasing, twin number per grain increases in both drawn copper wires, and the twin number per grain in drawn single crystal copper is much more than that of drawn polycrystalline copper wires. However, with strain increasing, the difference of recrystallization temperature and grain diameter between drawn single crystal and polycrystalline copper wires decreases, and the difference of twin number per grain decreases with strain and temperature increasing.