中文摘要：

用分子束外延（molecular beam epitaxy,MBE）方法在半绝缘InP衬底上生长In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As量子阱样品。在In0.52Al0.48As势垒层中进行元素Si的δ掺杂,元素Si电离的电子转移到量子阱中,在量子阱中形成二维电子气（two-dimensional electron gas,2DEG）。对该样品在低温下进行了磁输运测试,得到了2DEG纵向电阻（磁电阻）和横向电阻（Hall电阻）在不同温度下随磁场的变化曲线。观察到磁电阻的Shubnikov-de Haas（SdH）振荡和由零场自旋分裂引起的SdH振荡在低场下的拍频效应。也观察到Hall电阻出现量子Hall效应所特有的Hall平台。对Hall电阻在低场部分的直线拟合获得2DEG的Hall浓度,并根据Hall浓度和零场电导获得2DEG的Hall迁移率。对磁电阻曲线的快速傅立叶变换（fast Fourier trans-form,FFT）分析获得的2DEG浓度与Hall浓度一致。对拍频节点进行分析,获得了2DEG的自旋轨道耦合常数,并由此得到了零场自旋分裂能、自旋弛豫时间、自旋进动长度等实现自旋器件的相关参数。

英文摘要：

The In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well was grown on semi-insulating InP substrate using a GEN Ⅱmolecular beam epitaxy system.The In0.52Al0.48As barrier layer was δ-doped with silicon at the upper interface.The electrons of δ-dope silicon atoms were activated and then transferred into the quantum well,so the two-dimensional electron gas（2DEG） were formed.The longitudinal resistance（magneto-resistance） and transverse resistance（Hall resistance） as a function of magnetic field at low temperature were observed by means of magneto-transport measurements.The Shubnikov de Haas（SdH） oscillations of magneto-resistance and the beating patterns in the SdH oscillatory magneto-resistance originating from zero-field spin splitting of the 2DEG occurred.And the Hall plateau of Hall resistance due to quantum Hall effects occurred.Hall electron concentration and Hall mobility are extracted from the experimental Hall resistance as a function of magnetic field and the conductance at zero magnetic field,respectively.The 2DEG concentration using fast Fourier transform（FFT） analysis is consistence with the Hall concentration.The spin-orbit（SO） coupling constant was achieved from the beating nodes,so that the relevant parameters for the realization of the spintronic devices,such as zero-field spin splitting energy,spin relaxation time and spin precession length,are also achieved.