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Characterization of CdZnTe co-doped with indium and lead
ISSN号:0168-9002
期刊名称:Nuclear Instruments and Methods in Physics Researc
时间:2015.1.11
页码:48-51
相关项目:II-VI族Te化物半导体中富Te相及其诱导缺陷的调控研究
作者:
Lingyan Xu|Rongrong Guo|Yadong Xu|Gangqiang Zha|
同期刊论文项目
II-VI族Te化物半导体中富Te相及其诱导缺陷的调控研究
期刊论文 36
同项目期刊论文
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Barrier controlled carrier trapping of extended defects in CdZnTe detector
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Effects of deep-level defects on carrier mobility in CdZnTe crystals
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Study on the low temperature photoluminescence spectra of II-VI group telluride bulk crystals
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Migration of Te inclusions in CdZnTe single crystals under the temperature gradient annealing
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TEM study on HgIn2Te4 precipitates in Hg3In2Te6 crystals grown by the Bridgman method
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In 掺杂对 MVB-Te 溶剂法生长的 ZnTe 晶体光电性能的影响
Cd/Zn 气氛退火过程中 CdZnTe 晶体内 Te 夹杂的迁移研究
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