中文摘要：

采用磁控溅射方法制备了Ni56Mn27Ga17高温形状记忆合金薄膜，研究了薄膜的马氏体相变行为和组织结构。试验结果表明，Ni56Mn27Ga17薄膜马氏体相变开始温度高达584K，该薄膜室温下为非调制四方结构马氏体。透射电镜观察进一步表明，其马氏体亚结构为（111）Ⅰ型孪晶。

英文摘要：

The Ni56Mn27Ga17 high temperature shape memory alloy thin film has been prepared by using magnetron sputtering method. The martensitic transformation and microstructure of the thin film have been systematically investigated in this work. The results show that the martensitic transformation start temperature is ap- proximate 584K, and it is also found that the martensite of the thin film is nonmodulated tetragonal structure at room temperature. TEM observations and selected-areas electron diffraction analysis reveal that the substructure of martensite variants in Ni56 Mn27 Ga17 thin film is （111） Ⅰ twin relationship.