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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion imp
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2011.3.3
  • 页码：572-575
  • 相关项目：新型黑硅材料与红外探测器研究
作者： Zhou, Huiying|Qu, Shengchun|Jin, Peng|Xu, Bo|Ye, Xiaoling|Liu, Junpeng|Wang, Zhanguo|
同期刊论文项目
新型黑硅材料与红外探测器研究
期刊论文 37 会议论文 3
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