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AlN/Si(111)衬底上4H-SiC 的CVD 外延生长研究
  • ISSN号：1003-353X
  • 期刊名称：半导体技术
  • 时间：0
  • 页码：48-53
  • 语言：中文
  • 相关项目：新型低维量子结构与器件
作者： 韩 平等|吴 军|王荣华|
同期刊论文项目
新型低维量子结构与器件
期刊论文 196 会议论文 66 获奖 2 专利 22 著作 2
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AlN/Si(111)衬底上4H-SiC的CVD外延生长研究
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期刊信息
  • 《半导体技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:中国电子科技集团公司第十三研究所
  • 主编：赵小玲
  • 地址：石家庄179信箱46分箱
  • 邮编：050051
  • 邮箱：informax@heinfo.net
  • 电话：0311-87091339
  • 国际标准刊号：ISSN：1003-353X
  • 国内统一刊号：ISSN：13-1109/TN
  • 邮发代号:18-65
  • 获奖情况:
  • 中文核心期刊,中国科技论文统计用刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:6070