中文摘要：

在不同环境温度及不同驱动电流条件下,测试GaN基绿光发光二极管峰值波长的变化,结果表明,环境温度及驱动电流的增加，均会引起结温的增加,但是峰值波长的变化却有区别.在环境温度不变，驱动电流增加过程中，出现LED峰值波长的蓝移现象；在驱动电流不变、环境温度变化过程中，出现LED峰值波长的红移.用能带及极化场耦合模理论，分析实验结果，得到In0.25 GaN0.75阱层的极化场强为3.304MV/cm，垒层的极化场强为-0.826MV/cm；首次引入能隙变量随结温变化率的概念，在LED额定驱动电流范围内，热效应、载流子对极化效应引起的内建电场的屏蔽作用所引的能隙变量随结温变化率分别为3.637×10-4ev/k及1.3025×10-3ev/k，研究认为，二种效应引起的能隙变量随结温的变化率决定着峰值波长偏移的方向.

英文摘要：

Wavelength shifts of the GaN-based green light emitting diode （LED） were tested under different environment temperature and driving current. The results showed that when increasing either environment temperature or drive current, the junction temperature of LED will always rise along, while the variation of peak wavelength is different in either case. The peak wavelength of LED will blueshift when environmental temperature is constant and drive current increases. When drive current stay constant and environment temperature increases, the peak wavelength of LED becomes redshifted. The polarization built-in field intensity was estimated using polarization field coupling model theory. The polarization intensity in the well of In0.25GaN0.75 is 3.304 MVcm-1, the polarization field strength of barrier layer is -0.826 MVcm-1. Energy gap variable change rate relevant to junction temperature variation is introduced into analysis for the first time. Within the rated drive current of LED, the energy gap variable change rates relevant to junction temperature variation caused by heat effect and screening effect caused by carriers to the polarization built-in field is 3.637×10-4 evk-1 and 1.3025×10-3 evk-1 respectively. The study indicates that the energy gap change rate relevant to junction temperature variation caused by both effects determines the peak wavelength shifting direction.