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中文摘要：
分别采用摩尔比n（WO3）：n（ZrO2）=2.8：1复合陶瓷靶材、纯ZrW2O8陶瓷靶材以及WO3和ZrO2双靶，以射频磁控溅射法在石英基片上沉积制备ZrW2O8薄膜。利用x射线衍射仪（XRD）、扫描电子显微镜（SEM）研究了退火温度对采用不同靶材沉积制备薄膜的相组成和表面形貌的影响；用划痕仪、表面粗糙轮廓仪测量薄膜与基片之间的结合力和薄膜厚度。试验结果表明：采用不同靶材磁控溅射制备的薄膜均为非晶态，经过不同温度退火后，不同靶材制备的薄膜的相组成和表面形貌有所不同，但在高温1200℃热处理3min后均得到立方相ZrW2O8薄膜，其中采用WO3和ZrO2双靶交替磁控溅射制备的立方相ZrW2O8薄膜纯度最高，致密度好，且薄膜与基片之间结合力良好。
英文摘要：
The ZrW2O8 films were deposited on quartz substrates by RF magnetron sputtering of the different composite ceramic targets,including target with the mole ratio of n（WO3）： n（ZrO2）= 2.8：1 ,pure ZrW2O8 target,and WO3 and ZrO2 targets, respectively. The microstruetures of the ZrW2O8 films were characterized with X-ray diffraetion（XRD）, scanning electron miemseopy（SEM）and conventional mechanical probes. The influence of the films growth conditions, ineluding the annealing temperatures types of the target and sputtering power, in its properties was evaluated. The results show that sputtering of all kinds of target results in amorphous ZrW2O8 films,and that the type of target and the annealing temperature affect the surface morphologies and stoiehiometries of the films to a varied degree. For instance, cubic ZrW2O8 phase dominates in the films deposited by sputtering all types of the target and annealed at 1200℃ for 3min. Moreover, the altemating sputtering of WO3 and ZrO2 target produces the ZrW2O8 with the purest, the most compact, and the strongest film/substrate interfaeial adhesion.
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