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中文摘要：
用inline方式全部近空间升华方法制备n—CdS／p—CdTe取得了-11％的转换效率（AM1．5）．把其中n—CdS层采用磁控溅射方法取得了-10％的转换效率（AM1．5）．基于其电流密度一电压（J-V）曲线和外量子效率曲线，分析了其拟合关键参数对于电池性能的影响程度，并从理论分析上把目前器件性能参数与当今前沿性能参数以及其理论值进行比较，指出了如何提高电池转换效率（町）的方法：提高开路电压（Voc）、短路电流（Jsc）和填充因子（FF）．
英文摘要：
CdS/CdTe Thin film solar cells are grown in a homemade close-space sublimation system where the cell fabrication of p-n junction is carried out in a continuous, in-line process. The best efficiency achieved is about 11% （AM1.5）. Another cell is prepared with the same procedure except for the n-CdS layer coated by sputtering（SP）, achieving an efficiency of about 10% （AM1.5）. Current density-voltage and external quantum efficiency measurements are analyzed and the solar cell performances are characterized. By the comparison between the practical fitted data and theoretical calculations, the method of improving CdS/CdTe solar cell efficiency, i.e., increasing the open-circuit voltage （Vow）, short circuit current （Jsc）, and fill factor （FF）, is proposed.
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