中文摘要：

成功研制出非均匀发射极条间距功率SiGe异质结双极晶体管（HBT）用以改善功率器件热稳定性.实验结果表明，在相同的工作条件下，与传统的均匀发射极条间距HBT相比，非均匀结构HBT的峰值结温降低了22K.在不同偏置条件下，非均匀结构SiGeHBT均能显著改善芯片表面温度分布的非均匀性.由于峰值结温的降低以及芯片表面温度分布非均匀性的改善，采用非均匀发射极条间距结构的功率SiGeHBT可以工作在更高的偏置条件下，具有更高的功率处理能力.

英文摘要：

A multi-finger power SiGe heterojunction bipolar transistor （HBT） with non-uniform finger spacing was fabricated to improve thermal stability. Experimental results show that the peak temperature is reduced by 22K compared with that of an HBT with uniform finger spacing in the same operating conditions. The temperature profile across the device can be improved at different biases for the same HBT with non-uniform finger spacing. Because of the decrease in peak temperature and the improvement of temperature profile, the power SiGe HBT with non-uniform spacing can operate at higher bias and hence has higher power handling capability.