中文摘要：

本文提出了一种梯度氮化法制备出低阻、高稳定性的α-Ta（N）／TaN双层Cu扩散阻挡层，该方法有效地避免了异质元素的引入和高N含量导致的高电阻率．用四点探针（FPP）、X射线衍射（XRD）、场发射扫描电子显微镜（FESEM）进行薄膜电性能和微结构的表征．分析结果表明，梯度氮化工艺能调控金属Ta膜的相结构，从而获得低阻α—Ta（N）／TaN双层Cu扩散阻挡层结构．高温老化退火的实验结果进一步证明此结构具有高的热稳定性，失效温度高达800℃．

英文摘要：

α-Ta（N）/TaN bi-layers diffusion barriers with lower resistance were prepared by a magnetron sputtering method with controlling Nz flow rate forming a transition layer on TaN layer. Four-point probe （FPP）, X-ray diffraction （XRD） and scanning electron microscopy （SEM） were used for characterization of the diffusion barriers microstructure before and after annealing The results show that the as-deposited graded α-Ta（N）/TaN bi-layer films have lower resistivity and good crystallinity, and the graded α-Ta（N）/TaN bi-layer diffusion barrier has an excellent thermally stability. Its failure temperα- ture can be up to 800 ℃.