中文摘要：

采用脉冲控制模式将气体放电伏安特性由磁控溅射离子镀的＂正欧姆＂区间引入到＂反欧姆＂区间,并在不同靶电流密度下制备了TiN薄膜。研究了正反欧姆区间伏安特性对薄膜微观结构及性能的影响。结果表明：在靶电流密度（Itd）大于0.2 A·cm^-2的反欧姆区间,薄膜具有良好的表面质量和致密程度;且薄膜的硬度和膜/基结合强度分别由正欧姆区间Itd为0.11A·cm^-2的9.9 GPa、4.5 N提升到反欧姆区间I-td为0.38 A·cm^-2的25.8 GPa、18 N。

英文摘要：

The Volt-ampere characteristics of gas discharge was introduced from positive-Ohm section of magnetron sputtering ion plating into anti-Ohm section using a pulse mode and TiN films were deposited under different target current densities. The influences of Volt-ampere characteristics in positive-Ohm and anti-Ohm sections on the microstructure and properties of the films were studied. The results indicate that in the anti-Ohm section with target current density（Itd） more than 0.20 A·cm^-2, the films have good surface quality and density degree. In addition, the hardness and membrane-substrate binding strength are upgraded from 9.9 GPa, 4.5 N in positive-Ohm section（I-td=0.11 A·cm^-2） to 25.8 GPa, 18 N in anti-Ohm section（Itd=0.38 A·cm^-2）, respectively.