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中文摘要：
为了降低材料的二次电子发射系数，本文对高导电无氧铜（OFHC，简称无氧铜）进行离子束表面改性处理，并研究其最优工艺条件，重点考查了温度、时间等工艺参数对表面形貌以及二次电子发射系数（δ）的影响。利用扫描电镜、能谱仪等对表面形貌及成分进行分析并在此基础上对改性后样品的表面形貌形成机理进行了初步探讨。实验得出最佳工艺为：在600℃下离子束改性处理1h。该参数下处理的无氧铜样品的二次电子发射系数降低63．5％。
英文摘要：
The surfaces of the oxygen free high conductive（OFHC） copper were modified with argon ion sputtering to lower its secondary electron emission coefficient, δ. The impacts of the modification conditions, including the temperature, ion energy and sputtering time, on the secondary electron emission were evaluated. The microstructures of the surface modified OFI-IC copper were characterized with scanning electron microscopy and energy dispersive spectroscopy. The resuits show that the surface modification under optimized conditions significantly lowers the emission coefficient δ. For example,at 600℃ and sputtered for 1 h, δ was found to decrease by 63.5%, possibly because of the surface roughening caused by argon ion sputtering.
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