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First-principles study of native point defects in Bi2Se3
  • ISSN号：2158-3226
  • 期刊名称：AIP Advances
  • 时间：2013
  • 页码：052105-
  • 相关项目：拓扑绝缘体纳米结构的生长机制与形貌控制
作者： 薛林|钟建新|
同期刊论文项目
拓扑绝缘体纳米结构的生长机制与形貌控制
期刊论文 39 会议论文 1 获奖 2
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