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Optimization of 40-nm Node Epitaxial Diode Array for Phase-Change Memory Application
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2012.8.8
  • 页码：1192-1194
  • 相关项目：三维立体堆叠相变存储器制造方法探索
作者： Liu, Yan|Song, Zhitang|Liu, Bo|Wu, Guanping|Chen, Houpeng|Zhang, Chao|Wang, Lianhong|Feng, Songlin|
同期刊论文项目
三维立体堆叠相变存储器制造方法探索
期刊论文 36
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