中文摘要：

以Si片为衬底,利用磁控溅射法制备了Cu、Co共掺ZnO多层膜样品,并在氩气气氛下选取500℃、550℃、600℃和650℃作为退火温度进行退火处理.利用X射线衍射（XRD）、透射电子显微镜（TEM）、X射线光电子能谱（XPS）、振动样品磁强计（VSM）对所制备样品的结构、元素的化学价态和样品的磁性进行研究.结果表明,退火温度对Cu、Co共掺ZnO多层膜样品的结构及饱和磁化强度产生了一定的影响.

英文摘要：

Cu,Co codoped ZnO multilayer films were prepared by magnetron sputtering on the Si substrate in argon atmosphere selected 500 ℃,550 ℃,600 ℃ and 650 ℃ as the annealing temperature in our paper.The structure,chemical valence of the elements and magnetic properties of samples were characterized by X ray diffractometer （XRD）,transmission electron microscopy （TEM）,X-ray photoelectron spectroscopy（XPS） and vibration sample magnetometer （VSM）.The results showed that the annealing temperature effect on the structure and the saturation magnetization of the Cu,Co codoped ZnO multilayer films.