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A wide locking range and low DC power injection-locked frequency tripler for K-band application
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN248.4[电子电信—物理电子学] TN86[电子电信—信息与通信工程]
  • 作者机构:[1]State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China
  • 相关基金:supported by the National Natural Science Foundation of China(No.61376037); the National Twelve-Five Project(No.513***)
中文摘要:

This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 0.8 mm2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.

英文摘要:

This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 ×0.8 mm^2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘(网络版),荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),英国英国皇家化学学会文摘,中国北大核心期刊(2000版)
  • 被引量:7754