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中文摘要：
为了研究频率偏离增益峰值时光栅外腔半导体激光器的阈值特性,在以往研究双稳态的原简化模型的基础上,将H参量引入到载流子密度中,建立了H参量简化模型和H参量模型,并得到了计算调谐范围的解析式;采用数值计算和模拟的方法,在阈值载流子密度按波长的分布图谱中得到激光器的调谐范围,比较了三种模型在表达调谐特性方面的差异。结果表明：新的两种模型能够从阈值载流子密度图谱中反映更多的调谐特性,H参量模型较H简化模型精确了一个二极管模式的间隔。
英文摘要：
To study the threshold characteristics of ECLD when frequency deviating from gain of peak based on the prior simplified model, H parameter model and simplified model were established by introducing the H parameter into carrier density, an analytical expression for the tuning range has been derived. The tuning range of ECLD was derived from the change of carrier density with wave length by using the numerical calculation and imitation, and the difference in three models has been contrasted. The result show that two new models can reflect more of tuning characteristics in threshold carrier density, and the H parameter model makes the interval of diode mode more exact than H parameter simplified model.
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